Mizutani lab, Department of Quantum Engineering, Graduate School of Engineering, Nagoya University
81 (52) 789-5230
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He received the B.S., M.S., and Ph.D. degrees in electronics engineering from Nagoya University, Aichi, Japan, in 1971, 1973, and 1984, respectively.
In 1973, he joined the Musashino Electrical Communication Laboratory, NTT, Tokyo, Japan, where he worked on Gunn effect functional devices, the development of ion-implanted Ga-As MESFETs, the fabrication of GaAs ICs, and the characterization of GaAs substrates for GaAs ICs. In 1983, he moved to NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan, where he worked on GaAs MISFETs, InGaAs FETs, and quantum-effect devices. Since 1995, he has been a Professor with the Department of Quantum Engineering, Nagoya University, Nagoya, Japan, and is conducting research in compound semiconductor devices and quantum effect devices.
He is a leader of Specific Area Research ""Carbon Nanotube Nano-Electronics"" of MEXT.
He is a fellow of the IEEE Electron Devices Society (2009), a fellow of the Japanese Society of Applied Physics (2008), and a fellow of the Institute of Electronics, Information and Communication Engineering of Japan (2006).